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Research Facility
Opus MBE system 
Function:
The Opus 45 Molecular Beam Epitaxy (MBE) system consists of three
interconnected chambers:
- a growth chamber
- a preparation chamber
- a loading/ unloading chamber
The manipulators can accommodate wafers of up to five inches (12.7 cm) in
diameter. The wafers
can be kept in a horizontal face-down position during all steps.
The Opus 45 is one of four Molecular Beam Epitaxy (MBE) chambers at the
MPL.
Research:
This unit is primarily used to study the growth of CdTe and CdZnTe
on Si.
Specifications:
The chambers have the following statistics:
| Chamber |
Vacuumed by |
Pressure |
| Growth |
Two high-capacity cryopumps |
Typical:
low 10-10 torr |
| Preparation |
Large-capacity ion pump |
Basic:
low 10-10 torr |
| Loading/unloading |
Large-capacity ion pump |
Basic:
high 10-10 torr |
The manipulators in the growth and preparation chambers can
accommodate either:
- One wafer, up to five inches (12.7 cm) in diameter, or
- Three wafers, up to two inches (5.08 cm) in diameter.
The wafer(s) is/are mounted, indium-free, on a platen five inches in
diameter. (The platen may be omitted if the wafer is a full five inches
in diameter.) The growth chamber can accommodate eight material cells,
each of which faces the wafer(s) at a 45o angle. The material
cells are evenly distributed around the chamber. The large capacity
(100 cc) cell has a specific design with a two-filament heating stage
which is very useful for Te compounds. Great effort has been made in
the design of the heating stages in both the growth and preparation
chambers to achieve high temperature uniformity (+/- 1.5oC
over a wafer two inches in diameter.) The Opus 45, which is equipped
with a reflection high energy electron diffraction (RHEED) unit, has
been found to be almost ideal for the growth of highly uniform CdTe
layers on GaAs and Si.
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Opus 45 MBE system