Bin Yang

Bin Yang

E-mail:
byang@uic.edu

Office: 2354 SES (Science and Engineering South - MC 273)
845 West Taylor Street
Chicago, IL 60607-7059

Phone: (312) 413-2786

FAX: (312) 996-9016

Research interests: Molecular beam epitaxy.

Chemical vapor epitaxy.

Microelectronic devices.

Optoelectronic device and infrared detector structure design.

Materials growth and characterization.

Device processing.

Theoretical simulation of experimental results.

Education: Ph. D., Physics of Semiconductor Materials and Devices, Chinese Academy of Sciences, Beijing, People's Republic of China, July 1995.

Reviewer positions: Applied Physics Letters and Journal of Applied Physics, 1996-present.

Journal of Electrical Engineering (published in Japan in English), 1995-present.

Journal of Electrical and Electronics Engineering (published in Australia), 1995-present.
Awards: Awarded the Chinese National Prize of High Technology Development for the MBE growth of high quality HEMT and GaAs/Si materials, 1996.

Awarded the Presidential Scholarship of the Chinese Academy of Sciences for excellent Ph. D. thesis, 1996.

Awarded the Second Prize of Scientific and Technological Progress by the Chinese Academy of Sciences for the excellent research work in the growth of heterostructures for the high performance MESFET, HEMT, PHEMT, HBT and HEMT/InP, 1995.

Awarded the Third Prize for Excellent Paper by the Science and Technology Society of Beijing City for excellent work in optimizing the structural parameters of the modulation-doped GaAs/AlGaAs heterostructure, 1994.

Recognized as the excellent graduate student of Lanzhou University, 1992.

Recognized as the excellent undergraduate student of Lanzhou University, 1988 and 1986.

Research experience: Postdoc Research Associate, Microphysics Laboratory, University of Illinois at Chicago, December 1997-November 1998.

Growth of HgCdTe heterostructures on CdZnTe and CdTe/Si substrates for infrared detectors by MBE.

Characterization of HgCdTe and CdTe epilayers by FTIR, X-ray, and Hall measurement.

Surface analysis of the II-VI materials by RHEED, XPS and AES.

Postdoc Research Associate, Paul-Drude Institute of Solid State Electronics, Berlin, Germany, October 1995-December 1997.

Growth of GaN/InGaN/AlGaN heterostructures on GaAs, Si, 6H-SiC and LiGaO₃ substrates for blue laser diodes and light emitting diodes by DC plasma-assisted MBE, RF plasma-assisted MBE and NH₃ gas source MBE.

Characterization of GaN/InGaN/AlGaN heterostructures by RHEED, AFM, Hall Measurement, X-ray Diffraction, Reciprocal Space X-ray Diffraction, PL, Reflectance and Optical Absorption independently. Cooperated with colleagues using TEM, STM, Raman Scattering, CL, Time-resolve PL, PLE, Photocurrent, SIMS, Reflectance Anisotropy Spectroscopy and C-V Measurements to characterize III-nitride heterostructures.

Device processing: Photolithography, Ohmic contact, reactive ion etching.

Ph. D. candidate, Physics of Semiconductor Materials and Devices at the Institute of Semiconductors, Chinese Academy of Sciences, Beijing, People's Republic of China, September 1992-July 1995.

Design and grow high mobility modulation-doped GaAs/AlGaAs heterostructures, and heterostructures for HEMT, PHEMT, MESFET, HBT and HEMT/InP.

Growth and fabrication of GaAs/AlGaAs 808 nm high power quantum well lasers and GaAs/InGaAs 980 nm quantum well lasers.

Grow InAs self-organized quantum dots on GaAs(001), (111)A, (311)A and (411)A substrates and study the optical properties.

Characterize III-arsenide quantum wells and superlattices by DCXRD, PL, DLTS and Electrochemical C-V.

Societies: US Materials Research Society (since 1994).

Selected publications: *"Structural characterization of thin GaN epilayers directly grown on on-axis 6H-SiC(0001) by plasma-assisted MBE," Appl. Phys. Lett. (to be published).

*"Structural and optical properties of GaN layers directly grown on 6H-SiC(0001) by plasma-assisted MBE," Mat. Sci. Forum 264-268, 1235 (1998).

*"Growth of cubic GaN on Si(001) by plasma-assisted MBE," Appl. Surface Sci. 123/124, 1 (1998).

*"Structural properties of GaN layers on Si(001) grown by plasma-assisted MBE," J. of Appl. Phys. 83 (7), 3800 (1998).

*"Cubic (In,Ga)N layers grown on GaAs (001) by DC plasma-assisted MBE," J. of Appl. Phys. 82 (4), 1918 (1997).

"Magnetospectroscopy of bound phonons in high purity GaAs," Phys. Rev. Letters 79 (6), 1078 (1997).

"Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by synchrotron-radiation photoemission spectroscopy," Appl. Phys. Lett 70 (18), 2407 (1997).

"Investigation of the epitaxial growth of InGaAs on GaAs (100) and extension of two-dimensional-three-dimensional growth mode transition," Appl. Phys. Letters 66 (9), 1080 (1995).

"Photoluminescence study of very high density quasi 2DEG in pseudomorphic modulation-doped quantum wells," J. of Appl. Phys. 78 (1), 593 (1995).

*"Influence of DX-centers in AlGaAs barrier on the low-temperature electron mobility in GaAs/AlGaAs modulation-doped heterostructure," Appl. Phys. Letters 66 (11), 1406 (1995).

*"Interface roughness scattering in GaAs/AlGaAs modulation-doped heterostructures", Appl. Phys. Letters 65 (26), 3329 (1994).

*Denotes first author paper

Research interests:	Molecular beam epitaxy. Chemical vapor epitaxy. Microelectronic devices. Optoelectronic device and infrared detector structure design. Materials growth and characterization. Device processing. Theoretical simulation of experimental results.
Education:	Ph. D., Physics of Semiconductor Materials and Devices, Chinese Academy of Sciences, Beijing, People's Republic of China, July 1995.
Reviewer positions:	Applied Physics Letters and Journal of Applied Physics, 1996-present. Journal of Electrical Engineering (published in Japan in English), 1995-present. Journal of Electrical and Electronics Engineering (published in Australia), 1995-present.
Awards:	Awarded the Chinese National Prize of High Technology Development for the MBE growth of high quality HEMT and GaAs/Si materials, 1996. Awarded the Presidential Scholarship of the Chinese Academy of Sciences for excellent Ph. D. thesis, 1996. Awarded the Second Prize of Scientific and Technological Progress by the Chinese Academy of Sciences for the excellent research work in the growth of heterostructures for the high performance MESFET, HEMT, PHEMT, HBT and HEMT/InP, 1995. Awarded the Third Prize for Excellent Paper by the Science and Technology Society of Beijing City for excellent work in optimizing the structural parameters of the modulation-doped GaAs/AlGaAs heterostructure, 1994. Recognized as the excellent graduate student of Lanzhou University, 1992. Recognized as the excellent undergraduate student of Lanzhou University, 1988 and 1986.
Research experience:	Postdoc Research Associate, Microphysics Laboratory, University of Illinois at Chicago, December 1997-November 1998. Growth of HgCdTe heterostructures on CdZnTe and CdTe/Si substrates for infrared detectors by MBE. Characterization of HgCdTe and CdTe epilayers by FTIR, X-ray, and Hall measurement. Surface analysis of the II-VI materials by RHEED, XPS and AES. Postdoc Research Associate, Paul-Drude Institute of Solid State Electronics, Berlin, Germany, October 1995-December 1997. Growth of GaN/InGaN/AlGaN heterostructures on GaAs, Si, 6H-SiC and LiGaO₃ substrates for blue laser diodes and light emitting diodes by DC plasma-assisted MBE, RF plasma-assisted MBE and NH₃ gas source MBE. Characterization of GaN/InGaN/AlGaN heterostructures by RHEED, AFM, Hall Measurement, X-ray Diffraction, Reciprocal Space X-ray Diffraction, PL, Reflectance and Optical Absorption independently. Cooperated with colleagues using TEM, STM, Raman Scattering, CL, Time-resolve PL, PLE, Photocurrent, SIMS, Reflectance Anisotropy Spectroscopy and C-V Measurements to characterize III-nitride heterostructures. Device processing: Photolithography, Ohmic contact, reactive ion etching. Ph. D. candidate, Physics of Semiconductor Materials and Devices at the Institute of Semiconductors, Chinese Academy of Sciences, Beijing, People's Republic of China, September 1992-July 1995. Design and grow high mobility modulation-doped GaAs/AlGaAs heterostructures, and heterostructures for HEMT, PHEMT, MESFET, HBT and HEMT/InP. Growth and fabrication of GaAs/AlGaAs 808 nm high power quantum well lasers and GaAs/InGaAs 980 nm quantum well lasers. Grow InAs self-organized quantum dots on GaAs(001), (111)A, (311)A and (411)A substrates and study the optical properties. Characterize III-arsenide quantum wells and superlattices by DCXRD, PL, DLTS and Electrochemical C-V.
Societies:	US Materials Research Society (since 1994).
Selected publications:	"Structural characterization of thin GaN epilayers directly grown on on-axis 6H-SiC(0001) by plasma-assisted MBE," Appl. Phys. Lett. (to be published). "Structural and optical properties of GaN layers directly grown on 6H-SiC(0001) by plasma-assisted MBE," Mat. Sci. Forum 264-268, 1235 (1998). "Growth of cubic GaN on Si(001) by plasma-assisted MBE," Appl. Surface Sci. 123/124, 1 (1998). "Structural properties of GaN layers on Si(001) grown by plasma-assisted MBE," J. of Appl. Phys. 83 (7), 3800 (1998). "Cubic (In,Ga)N layers grown on GaAs (001) by DC plasma-assisted MBE," J. of Appl. Phys. 82 (4), 1918 (1997). "Magnetospectroscopy of bound phonons in high purity GaAs," Phys. Rev. Letters 79 (6), 1078 (1997). "Valence band discontinuity at a cubic GaN/GaAs heterojunction measured by synchrotron-radiation photoemission spectroscopy," Appl. Phys. Lett 70 (18), 2407 (1997). "Investigation of the epitaxial growth of InGaAs on GaAs (100) and extension of two-dimensional-three-dimensional growth mode transition," Appl. Phys. Letters 66 (9), 1080 (1995). "Photoluminescence study of very high density quasi 2DEG in pseudomorphic modulation-doped quantum wells," J. of Appl. Phys. 78 (1), 593 (1995). "Influence of DX-centers in AlGaAs barrier on the low-temperature electron mobility in GaAs/AlGaAs modulation-doped heterostructure," Appl. Phys. Letters 66 (11), 1406 (1995). "Interface roughness scattering in GaAs/AlGaAs modulation-doped heterostructures", Appl. Phys. Letters 65 (26), 3329 (1994). Denotes first author paper