Highly uniform HgCdTe layers grown on three-inch Si wafers.
Research Note:
Molecular Beam Epitaxy (MBE) was used to deposite mercury cadmium telluride (HgCdTe) films that
are responsive to the mid-wave region of the infrared radiation. As a step towards the
development of very large infrared diode arrays, these layers were grown on three-inch
silicon wafers. These layers exhibited very uniform lateral composition profile, a
major bottle-neck in achieving large area HgCdTe substrates.
These layers were used to form p on n planar architecture
for MWIR device fabrication. X-ray diffraction (full width at half
maximum (FWHM) = 120 arc sec), Hall (electron concentration and mobility in the absorber layer,
1x1015 cm-3 and 5x104 cm2/V-s), and photoconductive lifetime measurements at 80 K (hole lifetime
in the absorber layer = 1.18 msec) have been measured. The diode results indicate that these material are of state-of-the-art HgCdTe layers grown on large Si wafers.
Molecular Beam Epitaxy (MBE) was used to deposite mercury cadmium telluride (HgCdTe) films that
are responsive to the mid-wave region of the infrared radiation. As a step towards the
development of very large infrared diode arrays, these layers were grown on three-inch
silicon wafers. These layers exhibited very uniform lateral composition profile, a
major bottle-neck in achieving large area HgCdTe substrates.
These layers were used to form p on n planar architecture
for MWIR device fabrication. X-ray diffraction (full width at half
maximum (FWHM) = 120 arc sec), Hall (electron concentration and mobility in the absorber layer,
1x1015 cm-3 and 5x104 cm2/V-s), and photoconductive lifetime measurements at 80 K (hole lifetime
in the absorber layer = 1.18 msec) have been measured. The diode results indicate that these material are of state-of-the-art HgCdTe layers grown on large Si wafers. 
