Objectives
Microelectronic Materials and Processing
Our group's major thrust is on
relationships among processing, properties and structures as well as the
development of new materials and processes. Objectives include novel
substrate surface cleaning techniques, kinetics and surface chemistry of
reaction processes on silicon substrate surfaces, controlled production
of thin heterostructure layers, and design of new material systems for
fabrication of group IV-based optical, electronic and
micro-electro-mechanical systems. Specific systems of interest include
silicon selective epitaxial growth, silicon-germanium growth, ultra thin
silicon oxynitride films, and in-situ probing of surface chemical
phenomena during the thin film growth of microelectronic materials.
Heterogeneous Catalysis and Surface Chemistry
Our group's thrust is the emergence of a
basic new understanding of several key catalytic processes on transition
metal and other surfaces at high gas pressures. Time-resolved in situ
surface-enhanced Raman spectra of adsorbed species on a subsecond/seconds
time scale coupled with in situ infrared spectra, reaction rate
measurements in transient experiments (with or without isotopes) and ex
situ spectroscopic information are used to obtain hitherto unavailable
information concerning the nature, role and kinetic significance of
reaction intermediates and adsorbed species in heterogeneous catalytic
systems at high gas pressures. Specific reaction systems of interest
include partial oxidations of
olefins and other small organic molecules, selective hydrogenations, and
nitric oxide reduction by CO or H2
on several catalysts.
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