Micro- and nano-electronic materials and processing. Our group's major thrust is relationships among processing, properties and structure as well as the development of new materials and processes. Objectives include novel substrate surface cleaning techniques, kinetics and surface chemistry of reaction processes on silicon substrate surfaces, controlled production of ultra-thin heterostructure layers, and design of new material systems for optical, electronic and nano-electro-mechanical systems. Specific systems of interest include selective atomic layer deposition, ultra-thin high dielectric constant materials, active multiferroic nanostructures,multiple metal oxide nanostructures, atomic layer deposition, metal organic chemical vapor deposition, and in situ probing of surface chemical phenomena during the thin film growth of micro- and nano-electronic materials.
Heterogeneous catalysis and surface chemistry. Our group's thrust is the emergence of a basic new understanding of several key catalytic processes on transition metal and other surfaces at high gas pressures. Time-resolved in situ surface-enhanced Raman spectra of adsorbed species on a subsecond/seconds time scale coupled with in situ infrared spectra, reaction rate measurements in transient experiments (with or without isotopes) and ex situ spectroscopic information are used to obtain hitherto unavailable information concerning the nature, role and kinetic significance of reaction intermediates and adsorbed species in heterogeneous catalytic systems and solid oxide fuel cells at high gas pressures.
Long-term inhibition of bacterial-associated infections in implant devices . Implant-associated infections are potentially serious complications of medical device insertions. Many times, such infections are difficult to treat. Implant-associated infections may arise in the weeks following surgery due to contamination. At later times, infections can arise from hematogenous sources. In joint replacements, treatment entails aggressive systemic and local antibiotic treatment, debridement, and many times implant removal and reimplantation. Despite aggressive antibiotic treatments, eradication of established implant-associated infections is often unsuccessful. In collaboration with orthopedic surgeons, our research and implementation of implant surfaces modified with antibiotics would have a knowledge-driven impact in surgical implants and in particular for implants used by orthopedic surgeons.
Xu R., J. Huang, S. Ghosh, C. G. Takoudis, "Deposition and Characterization of Atomic Layer Deposited ZnS Thin Films on p-type GaSb(100) Using Diethylzinc Precursor and Hydrogen Sulfide," ECS Transactions, in press (2011)
Banerjee K., J. Huang, S. Ghosh, R. Xu, C. G. Takoudis, E. Plis, S. Krishna, S. Ketharanathan, M. Chriss, "Surface study of thioacetamide and zinc sulfide passivated long wavelength infrared type-II strained layer superlattice," SPIE 8012, 801243 (2011)
Tao Q., A. Kueltzo, M. Singh, G. Jursich, C.G. Takoudis, Atomic Layer Deposition of HfO2, TiO2, and HfxTi1-xO2 Using Metal (Diethylamino) Precursors and H2O J. Electrochem. Soc. 158, G27-G33 (2011).
Tao Q., G. Jursich, C.G. Takoudis, Investigation of Surface Sputtering and Post Annealing Effects on Atomic Layer Deposited HfO2 and TiO2, IEEE Transactions on Semiconductor Manufacturing, in press (2011) (invited)
Singh M., Y. Yang, C.G. Takoudis, A. Tatarenko, G. Srinivasan, P. Kharel, G. Lawes, Multiferroic BiFeO3 Thin Films for Multifunctional Devices, J. Nanoscience and Nanotechnology 10, 6195-6199 (2010).
Rasul A., J. Zhang, D. Gamota, C.G. Takoudis, Flexible high capacitance nanocomposite gate insulator for printed organic field effect transistors, Thin Solid Films 518, 7024-7028 (2010).
Tao Q., G. Jursich, C.G. Takoudis, Selective atomic layer deposition of HfO2 on copper patterned silicon substrates Applied Physics Letters 96, 192105/1-192105/3 (2010).
Jiang L., J. Zhang, D. Gamota, C.G. Takoudis, Organic thin film transistors with novel thermally cross-linked dielectric and printed electrodes on flexible substrates, Organic Electronics 11, 959-963 (2010).
Jiang L., J. Zhang, D. Gamota, C.G. Takoudis, Enhancement of the field-effect mobility of solution processed organic thin film transistors by surface modification of the dielectric, Organic Electronics 11, 344-350 (2010).
148. Majumder P., G. Jursich, C. Takoudis, Structural phase transformation of Y2O3 doped HfO2 films grown on Si using atomic layer deposition, J. Appl. Phys. 105, 104106/1-104106/6 (2009)
Seo P.-S, J.-J. Jeong, L. Zeng, C.G. Takoudis, B.J. Quinn, A.A. Khan, T. Hanada, A.H. Chishti, "Alternatively spliced exon 5 of the FERM domain of Protein 4.1R encodes a novel ninding site for erythrocyte p55 and is critical for membrane targeting in epithelial cells," Biochimica et Biophysica Acta - Molecular Cell Research 1793, 281-289 (2009)
Chian W.W., C.G. Takoudis, S.H. Lee, A. Weis-McNulty, R. Glick, N. Alperin, "Relationship between Ventricular Morphology and Aqueductal Cerebrospinal Fluid Flow in Healthy and Communicating Hydrocephalus," Investigative Radiology 44, 192-199 (2009)
Seo P.-S, B. J. Quinn, A.A. Khan, L. Zeng, C.G. Takoudis, T. Hanada, A. Bolis, A. Bolino, A.H. Chishti, "Identification of erythrocyte p55/MPP1 as a binding partner of NF2 tumor suppressor protein/Merlin," Experimental Biology and Medicine 234, 255-262 (2009)
Singh M., Y. Yang, C.G. Takoudis, A. Tatarenko, G. Srinivasan, P. Kharel, G. Lawes, "Metalorganic Chemical Vapor Deposited BiFeO3 films for tunable high-frequency devices," Electrochemical and Solid-State Letters 12, H161-H164 (2009).
Tao Q., G. Jursich, P. Majumder, M., W. Walkosz, P. Gu, R. Klie, C. Takoudis Composition-structure-dielectric property of yttrium-doped hafnium oxide films deposited by atomic layer deposition, Electrochem. Solid State Lett. 12, G50-G53 (2009)
Singh M.K., Y. Yang, C.G. Takoudis, Synthesis of multifunctional multiferroic materials from metalorganics, Coordination Chemistry Reviews 253, 2920-2934 (2009) (invited)
Song X., D. Gopireddy, C.G. Takoudis, "Characterization of titanium oxynitride films deposited by low pressure chemical vapor deposition using amide Ti precursor," Thin Solid Films 516, 6330-6335 (2008).
Katamreddy R., V. Omarjee, B. Feist, C. Dussarrat, M. Singh, C. Takoudis, "Tuning of material and electrical properties of strontium titanates using process chemistry and composition," ECS Transactions 16, 487-496 (2008).
Piret F., Singh M., Takoudis C. G., Su B.-L., "Optical properties in the UV range of a Ta2O5 inverse opal photonic crystal designed by MOCVD," Chemical Physics Letters 453, 87-91 (2008).
Rasul A., J. Zhang, D. Gamota, C.G. Takoudis, "Flexible high capacitance nanocomposite gate insulator for printed organic field effect transistors," Thin Solid Films in press (2008).
Majumder P., C.G. Takoudis, "Thermal stability of Ti/Mo and Ti/MoN nanostructures for barrier applications in Cu interconnects," Nanotechnology 19, 205202/1-205202/5 (2008).
Majumder P., G. Jursich, A. Kueltzo, C.G. Takoudis, "Atomic Layer Deposition of Y2O3 Films on Silicon Using Tris (Ethylcyclopentadienyl) Yttrium Precursor and Water Vapor," Journal of the Electrochemical Society 155, G152-G158 (2008).
Gopireddy D., C.G. Takoudis, "Diffusion-reaction modeling of the silicon oxide interlayer growth during thermal annealing of high dielectric constant materials on silicon," Physical Review B 77, 205304/1-205304/9 (2008).
Katamreddy R., R. Inman, G. Jursich, A. Soulet, C.G. Takoudis, "Nitridation and oxynitridation of Si to control interfacial reaction with HfO2," Thin Solid Films, in press (2008).
Singh M., Y. Yang, C.G. Takoudis, "Low-pressure metalorganic chemical vapor deposition of Fe2O3 thin films on Si(100) using n-butylferrocene and oxygen," Journal of the Electrochemical Society, in press (2008)
Katamreddy R., B. Feist, C.G. Takoudis, "Bis(diethylamino) silane as the silicon precursor in the atomic layer deposition of HfSiOx," Journal of the Electrochemical Society 155, G163-G167 (2008)
Majumder P., C.G. Takoudis, "Reactively Sputtered Mo-V nitride Thin Films as Ternary Diffusion Barriers for Copper Metallization," Journal of the Electrochemical Society, in press (2008)
Katamreddy R., R. Inman, G. Jursich, A. Soulet, C.G. Takoudis, "Effect of film composition and structure on the crystallization point of atomic layer deposited HfAlOx using metal (diethylamino) precursors and ozone," Acta Materialia 56, 710-718 (2008)
Katamreddy R., R. Inman, G. Jursich, A. Soulet, A. Nicholls, C.G. Takoudis, "Post deposition annealing of aluminum oxide deposited by atomic layer deposition using novel tris(diethylamino)aluminum and water vapor on Si(100)," Thin Solid Films 515, 6931-6937 (2007).
Song X., C.G. Takoudis, "Effect of NH3 on the low pressure chemical vapor deposition of TiO2 film at low temperature using tetrakis(diethylamino)titanium and oxygen," J. Vac. Sci. Techn. A 25, 360-367 (2007)
Katamreddy R., R. Inman, G. Jursich, A. Soulet, C.G. Takoudis, "ALD and characterization of aluminum oxide deposited on Si(100) using tris(diethylamino) aluminum and water vapor," Journal of the Electrochemical Society 154, S5 (2007).
Song X., C.G. Takoudis, "Cyclic chemical vapor deposited TiO2/Al2O3 films using trimethyl aluminum, tetrakis(diethylamino)titanium and O2," Journal of the Electrochemical Society G177-182, 154 (2007)
Singh M.K., Rosado J., Katamreddy R., Deshpande A., C.G. Takoudis, "Investigation of Local Coordination and Electronic Structure of Dielectric Thin Films from Theoretical Energy-loss Spectra, in Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies," MRS Symposium Series 996E, 33-38 (2007).
Singh M.K., Katamreddy R., C.G. Takoudis, "Effect of Oxidizer on Chemical Vapor Deposited Hafnium oxide-based Nanostructures and the Engineering of their Interfaces with Si(100), in Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies," MRS Symposium Series 996E, 69-74 (2007).
Majumder P., Katamreddy R., C.G. Takoudis "Characterization of Atomic Layer Deposited Ultrathin HfO2 Film as a Diffusion Barrier in Cu Metallization,” in Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics," MRS Symposium Series 990, 97-102 (2007).
Majumder P., Katamreddy R., C.G. Takoudis, "Atomic Layer Deposited Ultrathin HfO2 and Al2O3 Films as Diffusion Barriers in Copper Interconnects," Electrochemical and Solid-State Letters 10, H291-H295 (2007).
Majumder P., Katamreddy R., C.G. Takoudis, "Effect of film thickness on the breakdown temperature of atomic layer deposited ultrathin HfO2 and Al2O3 diffusion barriers in copper metallization," Journal of Crystal Growth 309, 12-17 (2007).
Katamreddy R., R. Inman, G. Jursich, A. Soulet, C.G. Takoudis, "Atomic layer deposition of HfO2, Al2O3 and HfAlOx using O3 and metal(diethylamino) precursors," Journal of Materials Research 22, 3455-3464 (2007)
Majumder P., M. Tiwari, C. Megaridis, M. Xu, J.McAndrew, C.G. Takoudis, "Evaluation and Testing of Organometallic Precursor for Copper Direct-Write," MRS Symposium Series 1002E, 23-29 (2007)
Majumder P., C.G. Takoudis, "Investigation on the diffusion barrier properties of sputtered Mo/W-N thin films in Cu interconnects," Applied Physics Letters 91, 162108/1-162108/3 (2007)
Deshpande A., R. Inman, G. Jursich, C.G. Takoudis, "Characterization of hafnium oxide grown on silicon by atomic layer deposition: Interface structure," Microelectronic engineering 83, 547-552 (2006).
Deshpande A., R. Inman, G. Jursich, C.G. Takoudis, "Annealing Behavior of Atomic Layer Deposited Hafnium Oxide on Silicon: Changes at the Interface," J. Appl. Phys. 99, 094102/1-094102/7 (2006).
Katamreddy R., R. Inman, G. Jursich, A. Soulet, C.G. Takoudis, "Atomic Layer Deposition and Characterization of Aluminum Oxide Deposited on Si(100) using tris(diethylamino) Aluminum and Water Vapor," J. Electrochem. Soc. 153, C701-706 (2006).
Katamreddy R., R. Inman, G. Jursich, A. Soulet, C.G. Takoudis, "Controlling interfacial reactions between HfO2 and Si using ultrathin Al2O3 diffusion barrier layer," Applied Physics Letters 89, 262906/1-262906/3 (2006).
Dasgupta A., D.-U. Jin, C.G. Takoudis, "Film strain and compositional changes in thermally nitrided silicon dioxide thin films," Thin Solid Films 472, 270-4 (2005).
Dasgupta A., C.G. Takoudis, Y. Lei, N.D. Browning, "Si0.85Ge0.15 oxynitridation in wet-nitric oxide ambient," Microelectronic Engineering 77, 242-249 (2005).
Murali S., A. Deshpande, C.G. Takoudis, "Modeling of the Metalorganic Chemical Vapor Deposition of Tantalum Oxide from Tantalum Ethoxide and Oxygen," Ind. Eng. Chem. Res. 44, 6387-6392 (2005).
Roy Chowdhuri A. and C.G. Takoudis, Investigation of the aluminum oxide/Si(100) interface formed by chemical vapor deposition," Thin Solid Films 446, 155-159 (2004).
Do.-U. Jin, C. G. Takoudis, J. Zhang, P. W. Brazis, and D. Gamota, "Novel Roll-to-Roll Metal Patterning on Flexible Substrates for Thin Organic Field Effect Transistor Technology," MRS Symposium Series EXS-2(Nontraditional Approaches to Patterning) , 51-53 (2004).
Deshpande A., R. Inman, G. Jursich, C.G. Takoudis, "Atomic Layer Deposition and Characterization of Hafnium Oxide Grown on Silicon from tetrakis(diethylamino)Hafnium and Water Vapor," J. Vac. Sci. Technol. A 22, 2035-2040 (2004).
Cui Z., J.M. Madsen, C.G. Takoudis, "A Thermal Processing System for Microelectronic Materials," Measurement Science and Technology 15, 2099-2107 (2004).
Roy Chowdhuri A. and C.G. Takoudis, Quantitative estimation of strain and substoichiometry near the SiO2/Si(100) interface," Thin Solid Films 457, 402-405 (2004).
Dasgupta A., C.G. Takoudis, Y. Lei, and N.D. Browning, "Si0.85Ge0.15 oxynitridation in nitric oxide/nitrous oxide ambient," J. Applied Physics 94, 716-719 (2003).
Dasgupta A. and C. G. Takoudis, "Low temperature Si0.85Ge0.15 oxynitridation in wet-nitric oxide ambient," MRS Symposium Series 765, 127-132 (2003).
Dasgupta A. and C.G. Takoudis, "Growth kinetics of thermal silicon oxynitridation in nitric oxide ambient," Journal of Applied Physics 93, 3615 (2003).
Dasgupta A. and C.G. Takoudis, "Two-step processes for bimodal N concentration profiles in ultra-thin silicon oxynitrides," Thin Solid Films 436, 162-167 (2003).
Roy Chowdhuri A., Dong-Un Jin, C. G. Takoudis, "Experimental and Theoretical Studied of the Si(100)/SiO2 Interface Formed by Wet and Dry Oxidation," MRS Symposium Series 747, 329-334 (2003).
Roy Chowdhuri A., C. G. Takoudis, R. F. Klie, N. D. Browning, "SiO2 Formation at the Aluminum Oxide/Si(100) Interface", MRS Symposium Series 747, 335-340 (2003).
Roy Chowdhuri A., C.G. Takoudis, R.F. Klie, and N.D. Browning, "Analysis of ultra-thin SiO2 interface layers in chemical vapor deposition of Al2O3 on Si by in-situ STEM," Applied Physics Letters 83, 1187-1189 (2003).
Dasgupta A., A. Roy Chowdhuri and C. G. Takoudis, "Metalorganic chemical vapor deposition of aluminum oxide on silicon nitride," MRS Symposium Series 751, 133-138 (2003).
Cui Z. and C.G. Takoudis, "Initial Oxidation of H-terminated Si((100) in O3(950 ppm)/O2 and Pure O2," J. Electrochem. Soc 150., G694-701 (2003).
Roy Chowdhuri A., D.-U. Jin, J. Rosado, C. G. Takoudis, "Strain and substoichiometry at the Si(100)/silicon dioxide interface," Phys. Rev. B 67., 245305/1-245305/7 (2003).
Dasgupta A. and C.G. Takoudis, "Process - Structure Relationships of Nitrided Oxides and Oxynitrides," MRS Symposium Series 686, 255-260 (2002).
Loukeris C., S, Khan and C.G. Takoudis, "Apriori Process - Property Relationships of GaN Epitaxial Growth in Ga/N/H/C/O Systems," MRS Symposium Series 693, 99-104 (2002).
Dasgupta A., S.S. Dang, R.A. Matthes and C.G. Takoudis, "Web-Based Instruction on the Fundamentals and Design of Micro- and Nano-Electronic Processes: Innovations, Challenges, and Benefits," International Journal of Engineering Education 18, 539-549 (2002).
Roy Chowdhuri A., C.G. Takoudis, R.F. Klie, and N.D. Browning, "MOCVD of Aluminum Oxide on Si: Evidence of Interface SiO2 Formation," Appl. Phys. Lett. 80, 4241-4243 (2002).
Dasgupta A. and C.G. Takoudis, "Low Temperature Oxynitridation of SiGe in NO/N2O Ambients," MRS Symposium Series 715, 503-508 (2002).
Dasgupta A. C.G. Takoudis, and G. Martel, "On the Argon annealing-based improvements of the properties of ultra-thin oxynitrides nitrided with NH3," MRS Symposium Series 716, 177-182 (2002).