Qian Tao; Gregory Jursich; Takoudis Christos G; Structure&Dielectric Characterizations of Atomic Layer Deposited HfO2 and TiO2 as promising Gate Oxides;IEEE/ASMC conference proceeding  (2010),  1.4. [View Article]

Qian Tao; Gregory Jursich; Takoudis Christos G; Selective atomic layer deposition of HfO2 on copper patterned silicon substrates;Applied Physics Letters  (2010),  96(192105). [View Article]

Qian Tao; Gregory Jursich; Prodyut Majumber; Manish Singh; Weronika Walkosz; Peter Gu; Robert Kelie; Takoudis Christos G; Composition-Structure-Dielectric Properties of Yttrium Doped Hafnium Oxide Films by Atomic Layer Deposition; Electrochemical Solid-state letters  (2009),  12(9), G50-G53. [View Article]

Seo Pil-Soo; Jeong Jong-Jin; Zeng Lixiao; Takoudis Christos G; Quinn Brendan J; Khan Anwar A; Hanada Toshihiko; Chishti Athar H  Alternatively spliced exon 5 of the FERM domain of protein 4.1R encodes a novel bindingsite for erythrocyte p55 and is critical for membrane targeting in epithelial cells.    Biochimica et biophysica acta  (2009),  1793(2), 281-9. [View Article]

Seo Pil-Soo; Quinn Brendan J; Khan Anwar A; Zeng Lixiao; Takoudis Christos G; Hanada Toshihiko; Bolis Annalisa; Bolino Alessandra; Chishti Athar H  Identification of Erythrocyte p55/MPP1 as a Binding Partner of NF2 Tumor Suppressor Protein/Merlin.    Experimental biology and medicine (Maywood, N.J.)  (2009),  234(3),  255-62. [View Article]

Manish Singh, Y. Yang, C. G. Takoudis, A. Tatarenko, G. Srinivasan, P. Kharel, and G. Lawes, Metalorganic Chemical Vapor Deposited BiFeO3 films for tunable high-frequency devices, Electrochem. Solid-State Lett.12(5), H161-H164 (2009). [View Article]

Majumder, Prodyut; Takoudis, Christos. Reactively Sputtered Mo–V Nitride Thin Films as Ternary Diffusion Barriers for Copper Metallization. J. Electrochem. Soc., 155(10) H703-H706 (2008). [View Article]

Singh, Manish; Yang, Yi; and Takoudis, Christos. Low-Pressure Metallorganic Chemical Vapor Deposition of Fe₂O₃ Thin Films on Si(100) Using n-Butylferrocene and Oxygen. J. Electrochem. Soc., 155(9) D618-D623 (2008). [View Article]

Gopireddy, Deepthi and Takoudis, Christos. Diffusion-reaction modeling of silicon oxide interlayer growth during thermal annealing of high dielectric constant materials on silicon. Phys. Rev. B, 77, 205304 (2008). [View Article]

Katamreddy, Rajesh; Feist, Ben; and Takoudis, Christos. Bis(diethylamino) Silane as the Silicon Precursor in the Atomic Layer Deposition of HfSiO_x. J. Electrochem. Soc., 155(8) G163-G167 (2008). [View Article]

Majumder, Prodyut; Jursich, Gregory; Kueltzo, Adam; and Takoudis, Christos. Atomic Layer Deposition of Y₂O₃ Films on Silicon Using Tris(ethylcyclopentadienyl) Yttrium Precursor and Water Vapor. J. Electrochem. Soc., 155(8) G152-G158 (2008). [View Article]

Katamreddy, Rajesh; Inman, Ronald; Jursich, Gregory; Soulet, Axel; Takoudis, Christos. Nitridation and oxynitridation of Si to control interfacial reaction with HfO₂. Thin Solid Films, Accepted Manuscript (in-press), 2008. [View Article]

Song, Xuemei; Gopireddy, Deepthi; Takoudis, Christos. Characterization of titanium oxynitride films deposited by low pressure chemical vapor deposition using amide Ti precursor. Thin Solid Films, 516(18), 6330-6335 (2008). [View Article]

Majumder, Prodyut; Takoudis, Christos. Thermal stability of sputtered Ti/MoN and Ti/Mo nanostructures in Cu interconnects. Nanotechnology, 19(20), 205202/1-205202/5 (2008). [View Article]

Piret, François; Singh, Manish; Takoudis, Christos; Su, Bao-Lian. Optical properties in the UV range of a Ta₂O₅ inverse opal photonic crystal designed by MOCVD. Chemical Physics Letters, 453(1-3), 87-91 (2008). [View Article]

Katamreddy, Rajesh; Inman, Ronald; Jursich, Gregory; Soulet, Axel; Takoudis, Christos. Effect of film composition and structure on the crystallization point of atomic layer deposited HfAlOx using metal (diethylamino) precursors and ozone. Acta Materialia, 56(4), 710-718 (2008). [View Article]

Katamreddy, Rajesh; Inman, Ronald; Jursich, Gregory; Soulet, Axel; Takoudis, Christos. Atomic layer deposition of HfO₂, Al₂O₃, and HfAlO_x using O₃ and metal(diethylamino) precursors. Journal of Materials Research, 22(12), 3455-3464 (2007). [View Article]

Majumder, Prodyut; Tiwari, Manish; Megaridis, Constantine;  McAndrew, James; Xu, Mindi; Belot, John;  Takoudis, Christos G.. Evaluation and Testing of Organometallic Precursor for Copper Direct-Write. Materials Research Society Symposium Proceedings, Volume 1002E (Printing Methods for Electronics, Photonics and Biomaterials), 1002-N07-23 (2007).

Majumder, Prodyut; Takoudis, Christos G.. Investigation on the diffusion barrier properties of sputtered Mo/W-N thin films in Cu interconnects. Applied Physics Letters 91(16), 162108/1-162108/3 (2007). [View Article]

Majumder, Prodyut; Katamreddy, Rajesh; Takoudis, Christos. Effect of film thickness on the breakdown temperature of atomic layer deposited ultrathin HfO₂ and Al₂O₃ diffusion barriers in copper metallization. Journal of Crystal Growth 309(1), 12-17 (2007). [View Article]

Majumder, Prodyut; Katamreddy, Rajesh; Takoudis, Christos G.. Characterization of atomic layer deposited ultrathin HfO2 film as a diffusion barrier in Cu metallization. Materials Research Society Symposium Proceedings 990 (Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics), 97-102 (2007).

Singh, Manish K; Rosado, Javier; Katamreddy, Rajesh; Deshpande, Anand; Takoudis, Christos G.. Investigation of Local Coordination and Electronic Structure of Dielectric Thin Films from Theoretical Energy-loss Spectra. Materials Research Society Symposium Proceedings 996E (Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies) 0996-H05-27 (2007).

Singh, Manish K; Katamreddy, Rajesh; Takoudis, Christos G: Effect of Oxidizer on Chemical Vapor Deposited Hafnium oxide-based Nanostructures and the Engineering of their Interfaces with Si(100). Materials Research Society Symposium Proceedings 996E (Characterization of Oxide/Semiconductor Interfaces for CMOS Technologies), 0996-H05-10 (2007).

Majumder, Prodyut; Katamreddy, Rajesh; Takoudis, Christos. Atomic Layer Deposited Ultrathin HfO₂ and Al₂O₃ Films as Diffusion Barriers in Copper Interconnects. Electrochem. Solid-State Lett., 10(10), H291-H295 (2007). [View Article]

Song, Xuemei; Takoudis, Christos. Cyclic Chemical-Vapor-Deposited TiO₂/Al₂O₃ Film Using Trimethyl Aluminum, Tetrakis(diethylamino)titanium, and O₂. Journal of the Electrochemical Society 154(8), G177-G182 (2007). [View Article]

Katamreddy, Rajesh; Inman, Ronald; Jursich, Gregory; Soulet, Axel; Nicholls, Alan; Takoudis, Christos. Post deposition annealing of aluminum oxide deposited by atomic layer deposition using tris(diethylamino)aluminum and water vapor on Si(100). Thin Solid Films 515(17), 6931-6937 (2007). [View Article]

Song, Xuemei; Takoudis, Christos. Effect of NH₃ on the low pressure chemical vapor deposition of TiO₂ film at low temperature using tetrakis(diethylamino)titanium and oxygen. Journal of Vacuum Science & Technology A 25(2), 360-367 (2007). [View Article]

Katamreddy, Rajesh; Inman, Ronald; Jursich, Gregory; Soulet, Axel; Takoudis, Christos. Controlling interfacial reactions between HfO₂ and Si using ultrathin Al₂O₃ diffusion barrier layer. Applied Physics Letters 89, 262906 (2006). [View Article]

Rasul, Amjad; Zhang, Jie; Gamota, Dan; Takoudis, Christos. Printed organic electronics with a high κ nanocomposite dielectric gate insulator.  Proceedings - Electronic Components & Technology Conference 56th(Vol. 1), 167-170 (2006).

Katamreddy, Rajesh; Inman, Ronald; Jursich, Gregory; Soulet, Axel; Takoudis, Christos. ALD and Characterization of Aluminum Oxide Deposited on Si(100) using Tris(diethylamino) Aluminum and Water Vapor. Journal of Electrochemical Society 153(10),  C701-C706 (2006).  [View Article]

Deshpande, Anand; Inman, Ronald; Jursich, Gregory; Takoudis, Christos G.. Annealing behavior of atomic layer deposited hafnium oxide on silicon: Changes at the interface. Journal of Applied Physics 99(9), 094102/1-094102/7 (2006).  [View Article]

Deshpande, Anand; Inman, Ronald; Jursich, Gregory; Takoudis, Christos. "Characterization of hafnium oxide grown on silicon by atomic layer deposition: Interface structure." Microelectronic Engineering, 83(3), 547-552 (2006).  [View Article]

Gopireddy, Deepthi; Takoudis, Christos. G.; Gamota, Dan; Zhang, Jie; Brazis, Paul W., "Fabrication of silicon nanowires using atomic layer deposition." NSTI Nanotech 2005, NSTI Nanotechnology Conference and Trade Show, Anaheim, CA, United States, May 8-12, 2005, 2, 515-518 (2005).

Jin, Dong-Un; Chowdhuri, Abhijit Roy; Takoudis, Christos G.; Zhang, Jie; Gamota, Daniel. "Metal patterning on flexible substrates suitable for roll-to-roll processes." Digest of Technical Papers - Society for Information Display International Symposium , 34, 359-361 (2003).

Murali S., A. Deshpande, C. G. Takoudis, "Modeling of the Metalorganic Chemical Vapor Deposition of Tantalum Oxide from Tantalum Ethoxide and Oxygen," Ind. Eng. Chem. Res., 44(16), 6387-6392 (2005). [View Article]

Dasgupta A., C.G. Takoudis, Y. Lei, N.D. Browning, "Si_0.85Ge_0.15 oxynitridation in wet-nitric oxide ambient," Microelectronic Engineering, 77(3-4), 242-249 (2005). [View Article]

Dasgupta A., D.-U. Jin, C. G. Takoudis, "Film strain and compositional changes in thermally nitrided silicon dioxide thin films," Thin Solid Films 472, 270-4 (2005). [View Article]

Cui Z., J. M. Madsen, C. G. Takoudis, "A Thermal Processing System for Microelectronic Materials," Measurement Science and Technology 15, 2099-2107 (2004). [View Article]

Deshpande A., R. Inman, G. Jursich, C. G. Takoudis, "Atomic Layer Deposition and Characterization of Hafnium Oxide Grown on Silicon from tetrakis(diethylamino)Hafnium and Water Vapor," J. Vac. Sci. Technol. A 22, 2035-2040 (2004). [View Article]

Roy Chowdhuri A. and C. G. Takoudis, "Investigation of the aluminum oxide/Si(100) interface formed by chemical vapor deposition," Thin Solid Films 446, 155-159 (2004). [View Article]

D.-U. Jin, C. G. Takoudis, J. Zhang, P. W. Brazis, and D. Gamota, "Novel Roll-to-Roll Metal Patterning on Flexible Substrates for Thin Organic Field Effect Transistor Technology," MRS Symposium Series EXS-2 (Nontraditional Approaches to Patterning) , 51-53 (2004).

Roy Chowdhuri A. and C. G. Takoudis, "Quantitative estimation of strain and substoichiometry near the SiO₂/Si(100) interface," Thin Solid Films 457, 402-405 (2004). [View Article]

Dasgupta A. and C. G. Takoudis, "Growth kinetics of thermal silicon oxynitridation in nitric oxide ambient," J. of Applied Physics 93, 3615 (2003).  [View Article]

Dasgupta A. and C. G. Takoudis, "Two-step processes for bimodal N concentration profiles in ultra-thin silicon oxynitrides," Thin Solid Films 436, 162-167 (2003). [View Article]

Roy Chowdhuri A., Dong-Un Jin, C. G. Takoudis, "Experimental and Theoretical Studied of the Si(100)/SiO₂ Interface Formed by Wet and Dry Oxidation," MRS Symposium Series 747, 329-334 (2003).

Roy Chowdhuri A., C. G. Takoudis, R. F. Klie, N. D. Browning, "SiO₂ Formation at the Aluminum Oxide/Si(100) Interface", MRS Symposium Series 747, 335-340 (2003).

Roy Chowdhuri A., C.G. Takoudis, R.F. Klie, and N.D. Browning, "Analysis of ultra-thin SiO₂ interface layers in chemical vapor deposition of Al₂O₃ on Si by in-situ STEM," Applied Physics Letters 83, 1187-1189 (2003).  [View Article]

Dasgupta A., A. Roy Chowdhuri and C. G. Takoudis, "Metalorganic chemical vapor deposition of aluminum oxide on silicon nitride," MRS Symposium Series 751, 133-138 (2003).

Cui Z. and C. G. Takoudis, "Initial Oxidation of H-terminated Si((100) in O₃(950 ppm)/O₂ and Pure O₂," J. Electrochem. Soc 150., G694-701 (2003). [View Article]

Roy Chowdhuri A., D.-U. Jin, J. Rosado, C. G. Takoudis, "Strain and substoichiometry at the Si(100)/silicon dioxide interface," Phys. Rev. B 67, 245305/1-245305/7 (2003). [View Article]

Dasgupta A. and C. G. Takoudis, "Low temperature Si_0.85Ge_0.15 oxynitridation in wet-nitric oxide ambient," MRS Symposium Series 765, 127-132 (2003).

Dasgupta A., C. G. Takoudis, Y. Lei, and N.D. Browning, "Si_0.85Ge_0.15 oxynitridation in nitric oxide/nitrous oxide ambient," J. Applied Physics 94, 716-719 (2003). [View Article]

Dasgupta A. and C. G. Takoudis, "Process – Structure Relationships of Nitrided Oxides and Oxynitrides," MRS Symposium Series 686, 255-260 (2002).

Loukeris C., S, Khan and C.G. Takoudis, "Apriori Process – Property Relationships of GaN Epitaxial Growth in Ga/N/H/C/O Systems," MRS Symposium Series 693, 99-104 (2002).

Dasgupta A., S. S. Dang, R. A. Matthes and C. G. Takoudis, "Web-Based Instruction on  the Fundamentals and Design of Micro- and Nano-Electronic Processes: Innovations, Challenges, and Benefits," International Journal of Engineering Education 18, 539-549 (2002). [View Article]

Roy Chowdhuri A., C. G. Takoudis, R. F. Klie, and N.D. Browning, "MOCVD of Aluminum Oxide on Si: Evidence of Interface SiO₂ Formation," Appl. Phys. Lett. 80, 4241-4243 (2002). [View Article]

Dasgupta A. and C. G. Takoudis, "Low Temperature Oxynitridation of SiGe in NO/N₂O Ambients," MRS Symposium Series 715, 503-508 (2002).

Dasgupta A. C. G. Takoudis, and G. Martel, "On the Argon annealing-based improvements of the properties of ultra-thin oxynitrides nitrided with NH₃," MRS Symposium Series 716, 177-182 (2002).

Method and apparatus for characterization of ultrathin silicon oxide films using mirror-enhanced polarized reflectance Fourier transform infrared spectroscopy. Takoudis, Christos G.; Cui, Zhenjiang. (The Board of Trustees of the University of Illinois, USA). PCT Int. Appl. (2002), 59 pp. Application: WO 2002-US13460 20020429. Priority: US 2001-287461. [View Article]

Method and apparatus for characterization of ultrathin silicon oxide films using mirror-enhanced polarized reflectance Fourier transform infrared spectroscopy. Takoudis, Christos G.; Cui, Zhenjiang. Priority Application Information US 2001-287461P 20010430. [View Article]

Cui, Zhenjiang; Takoudis, Christos G., "Design and simulation of a vacuum micropump," Proceedings of SPIE-The International Society for Optical Engineering  4560 (Microfluidics and BioMEMS), 263-273 (2001).

Cui, Zhenjiang; Takoudis, Christos G., "Characterization of ultrathin silicon oxide films with mirror-enhanced polarized reflectance Fourier transform infrared spectroscopy,"  J. Applied Physics  89(9), 5170-5176 (2001). [View Article]

Madsen J., Z. Cui and C. G. Takoudis, "Low Temperature Oxidation of SiGe in Ozone - Ultra Thin Oxides," J. Appl. Phys. 87, 2046-2051 (2000). [View Article]

Dang S. S. and C. G. Takoudis, "Angled-Resolved XPS Studies of Interfacial Bonding States in Silicon Oxynitrides Fabricated Using Different Methodologies", MRS Symposium Series 586, 99-104 (2000).

Dang S.S. and C. G. Takoudis, "Process Improvements for Reductions in Total Charge and Interface Trap Densities of Thermally-Grown Sub-3.5nm-Thick Silicon Nitrides", MRS Symposium Series 592, 213-218 (2000).

Dang, S. S. and C. G. Takoudis, "Rate-Limiting Steps during Nitrogen Incorporation in Furnace-grown Silicon Oxynitrides: Effects on Wafer-to-wafer Uniformity," Thin Solid Films 366, 225-231 (2000). [View Article]

Cui Z., J. Madsen and C. G. Takoudis, "Rapid Thermal Oxidation of Silicon in Ozone," J. Appl. Phys. 87, 8181-8186 (2000). [View Article]

Dang, S. S., R. Matthes and C. G. Takoudis, "A Web-Based Course in Chemical Engineering: 'Fundamentals and Design of Microelectronics Processing'," Chem. Eng. Educ. 34, 350-355 (2000). [View Article]

Dang S. S. and C. G. Takoudis, "Nitrogen Incorporation Near Top and Bottom Surfaces of Ultra-Thin Silicon Oxynitrides," Proceedings of 1st International Conference on Microelectronics and Interfaces, American Vacuum Society, Santa Clara, CA, 205-211 (2000).

Dang S. S. and C. G. Takoudis, "O₂-Enhanced Thermal Removal of Nitrogen from Silicon Oxynitrides," Proceedings of 1st International Conference on Microelectronics and Interfaces, American Vacuum Society, Santa Clara, CA, 145-153 (2000).

Cui Z., J. Madsen and C. G. Takoudis, "Process-Property Relationships of the Si(100) and Si_xGe_1-x Oxidation in Ozone at Low Temperatures," Proceedings of 1st International Conference on Microelectronics and Interfaces, American Vacuum Society, Santa Clara, CA, 302-308 (2000).

Dang S. S. and C. G. Takoudis, "Optimization of Bimodal Nitrogen Concentration Profiles in Silicon Oxynitrides," J. Appl. Phys. 86, 1326-1330 (1999). [View Article]

Richardson C. and C. G. Takoudis, "Process-Property Relationships of SiC Chemical Vapor Deposition in the Si/H/C/O System," J. Electrochem Soc. 146, 3270-3276 (1999). [View Article]

Chan H. Y., C. G. Takoudis and M. J. Weaver, "Oxide Film Formation and Oxygen Adsorption on Copper in Aqueous Media as Probed by Surface-Enhanced Raman Spectroscopy," J. Phys. Chem. B 103, 357-365 (1999).

Chan H. Y., C. G. Takoudis and M. J. Weaver, "Interfacial Chemistry of Copper Relevant to Chemical Mechanical Polishing as Elucidated by Surface-Enhanced Raman Spectroscopy," MRS Symposium Series 437, 265-270 (1999).

Chan H. Y., C. G. Takoudis and M. J. Weaver, "Electrochemical Control of Gas-Phase Oxidation and Reduction of Copper as Probed by Surface-Enhanced Raman Spectroscopy," Electrochem. & Solid-State Lett 2, 189-191 (1999).

Chan H. Y., C. G. Takoudis and M. J. Weaver, "In-Situ Monitoring of Chemical Vapor Deposition at Ambient Pressures by Surface-Enhanced Raman Spectroscopy: Initial Growth of Tantalum(V) Oxide on Platinum," J. Amer. Chem. Soc. 121, 9219-9220 (1999).

Dang S. S. and C. G. Takoudis, "Optimal Nitrogen Incorporation Near Top and Bottom Surfaces of Ultra-thin Silicon Oxynitrides," Electrochem Soc. 99-6, 185-192 (1999).

Christos G. Takoudis, Sanjit Singh Dang, Gerd Duscher, Nigel D. Browning, and Stephen J. Pennycook, "Silicon Suboxide Growth Over Planar SiO₂/Si Interface in Pure N₂O Ambients," Electrochem Soc. 99-6, 240-249 (1999).

Dang S. S. and C. G. Takoudis, "Gas and Solid Phase Variations in Silicon Oxynitridation Along a Furnace Length," Electrochem Soc. 99-6, 143-154 (1999).

Dang S. S. and C. G. Takoudis, "Instruction via Web-Based Semiconductor Simulation Tools," Chem. Eng. Educ.  32, 242-245 (1998).

Williams C. T., E. K.-Y. Chen, C. G. Takoudis and M. J. Weaver, "Reduction Kinetics of Surface Rhodium Oxide by Hydrogen and Carbon Monoxide at Ambient Gas Pressures as Probed by Transient Surface-Enhanced Raman Spectroscopy," J. Phys. Chem. B 102, 4785-4794 (1998).

Williams C. T., H. Y. H. Chan, A. A. Tolia, M. J. Weaver, and C. G. Takoudis, "In Situ Real-Time Studies of Heterogeneous Catalytic Mechanisms at Ambient Pressures as Probed by Surface-Enhanced Raman and Mass Spectroscopies," J. I & EC Research 37, 2307-2315 (1998).

Weaver M. J., C. T. Williams, S. Zou, H. Y. H. Chan, and C. G. Takoudis, "Surface Potentials of Metal-Gas Compared with Analogous Electrochemical Interfaces as Probed by Adsorbate Vibrational Frequencies," Catalysis Lett. 52, 181-190 (1998).

G. Duscher, S. L. Pennycook, N. D. Browning, R. Rupangudi, C. G. Takoudis, H. J. Gao, and R. Singh, "Structure, Composition and Strain Profiling of Si/SiO₂ Interfaces," Proceedings of 1998 International Conference on Characterization and Metrology for ULSI Technology,  Gaithersburg, MD, 191-195 (1998).

Chan H. Y., C. T. Williams, M. J. Weaver and C. G. Takoudis, "Methanol Oxidation on Palladium Compared to Rhodium at Ambient Pressures as Probed by Surface-Enhanced Raman and Mass Spectroscopies," J. Catal. 174, 191-200 (1998).

Williams C. T., C. G. Takoudis and M. J. Weaver, "Methanol Oxidation on Rhodium as Probed by Surface-Enhanced Raman and Mass Spectroscopies: Adsorbate Stability, Reactivity and Catalytic Relevance," J. Phys. Chem. B 102, 406-416 (1998).

Wang W.-C., J. P. Denton, G. W. Neudeck, I-M. Lee, C. G. Takoudis, M. T. K. Koh, and E. P. Kvam, "Selective Epitaxial Growth of Si_1-xGe_x/Si Strained-Layers in a Tubular Hot-Wall LPCVD System," J. Vac. Sci. Techn. B 15, 138-141 (1997).

Lee I-M., W.-C. Wang, M. T. K. Koh, J. P. Denton, E. P. Kvam, G. W. Neudeck, and C. G. Takoudis, "Selective Epitaxial Growth of Strained Silicon-Germanium Films in Tubular Hot-Wall Low Pressure Chemical Vapor Deposition Systems," MRS Symposium Series 448, 265-270 (1997).

Lee I-M., C. G. Takoudis, W.-C. Wang, J. P. Denton, G. W. Neudeck, M. T. K. Koh, and E. P. Kvam, "Process Improvements in the Selective Epitaxial Growth of Si_1-xGe_x/Si Strained-Layers in a Conventional Hot-Wall LPCVD System," J. Electrochem Soc. 144, 1095-1099 (1997).

Williams C. T., C. A. Black, M. J. Weaver and C. G. Takoudis, "Adsorption and Hydrogenation of Carbon Monoxide on Polycrystalline Rhodium at High Gas Pressures," J. Phys. Chem. 101, 2874-2883 (1997).

Kongetira P., G. W. Neudeck and C. G. Takoudis, "An Expression for the Growth Rate of Selective Epitaxial Growth of Silicon Using Dichlorosilane-HCl-H₂ in a LPCVD Pancake Reactor," J. Vac. Sci. Techn. B 15, 1902-1907 (1997).

Singhvi S. and C. G. Takoudis, "Growth Kinetics of Furnace Silicon Oxynitridation in Nitrous Oxide Ambients," J. Appl. Phys. 82, 442-448 (1997).

Lee I-M., A. Jansons and C. G. Takoudis, " Effects of Water Vapor and Chlorine on the Epitaxial Growth of SiGe Films by Chemical Vapor Deposition - Thermodynamic Analysis," J. Vac. Sci. Techn. B 15, 880-885 (1997).

Williams C. T., C. G. Takoudis and M. J. Weaver, "Raman Spectral Evidence of Reactive Oxide Formation During Methanol Oxidation on Polycrystalline Rhodium at High Gas Pressures," J. Catal. 170, 207-210 (1997).

Geiger C. D., R. Hase, C. G. Takoudis and R. Uzsoy, "Alternative Facility Layouts for Semiconductor Wafer Fabrication Facilities," IEEE/Comp. Pack. Manuf. Technol. Part C 20, 152-163 (1997).

Pancyzyk C. and C. G. Takoudis, "Emission Infrared Spectroscopy as an In Situ Probe of CVD at High Gas Pressures - The Epitaxial Silicon CVD," Electrochem. Soc. 97-25, 652-659 (1997).

Chan H. Y., C. G. Takoudis and M. J. Weaver, "High Pressure Oxidation of Rethenium as Probed by Surface-Enhanced Raman and X-Ray Photoelectron Spectroscopies," J. Catal.172, 336-345 (1997).

Lee I-M., W. C. Wang, J. P. Denton, M. T. K. Koh, C. G. Takoudis, E. P. Kvam, and G. W. Neudeck, "Selective Epitaxial Growth of SiGe Films in LPCVD Reactor Systems - Characterization of SiGe Films by Ellipsometry," Electrochem Soc.97-25, 1348-1355 (1997).

Lee I-M. and C.G. Takoudis, "Analysis and Characterization of Native Oxide Growth on Epitaxial SiGe Films after a Chemical Clean," J. Vac. Sci. Techn. A15, 3154-3157 (1997).

Singhvi S. and C. G. Takoudis, "Furnace Silicon Oxynitridation in Nitrous Oxide Ambients," Electrochem. Soc. 97-25, 1364-1371 (1997).

Lee I-M., A. Jansons and C. G. Takoudis, "Water Vapor and Chlorine Effects on the Epitaxial Growth of SiGe Films by CVD," Electrochem. Soc. 97-25, 123-130 (1997).

I-Ming Lee, W.-C. Wang, M. T. K. Koh, J. P. Denton, E. P. Kvam, G. W. Neudeck, and C. G. Takoudis, "Selective Epitaxial Growth of Si_1-xGe_x Films in Conventional Low Pressure Chemical Vapor Deposition Systems," Proceedings of First Panhellenic Scientific Conference in Chemical Engineering, Patras, Greece, 43-48 (1997).

Hesketh P. J., J. G. Boyd, M. J. MacNallan, G. J. Maclay and C. G. Takoudis, "Integration of MEMS Courses into an Engineering Curriculum," Proceedings of International Conference on Engineering Education, Chicago, Illinois, 120-132 (1997).

Lee I-M., W.-C. Wang, G. W. Neudeck and C. G. Takoudis, "Kinetics and Modeling of Low Pressure Chemical Vapor Deposition of Si_1-xGe_x Epitaxial Thin Films," Chem. Eng. Sci. 51, 2681-2686 (1996).

Lee I-M., G. W. Neudeck and C. G. Takoudis, "Low Pressure Chemical Vapor Deposition of Epitaxial Silicon-Germanium, Epitaxial Silicon and Poly-Silicon," Electrochem Soc. 96-5, 107-112 (1996).

Panczyk C. and C. G. Takoudis, "In Situ Infrared Emission Spectroscopy During Silicon Chemical Vapor Deposition," Electrochem Soc. 96-5, 183-188 (1996).

Williams C. T., A. A. Tolia, M. J. Weaver and C. G. Takoudis, "Surface-Enhanced Raman Spectroscopy as an In-Situ Real-Time Probe NO Reduction over Rhodium at High Gas Pressures," Chem. Eng. Sci. 51, 1673-1682 (1996).

Lee I.-M. and C. G. Takoudis, "Process-Property Relationships in Si_1-xGe_x Chemical Vapor Deposition - Thermodynamic and Kinetic Studies," J. Electrochem. Soc. 143, 1719-1726 (1996).

Williams C. T., A. A. Tolia, H. Chan, C. G. Takoudis and M. J. Weaver, "Surface-Enhanced Raman Spectroscopy as an In Situ Real-Time Probe of Catalytic Mechanisms at High Gas Pressures:  The CO-NO Reaction on Platinum and Palladium," J. Catal. 163, 63-76 (1996).

Gaynor W., G. W. Neudeck and C. G. Takoudis, "Process-Property Relationships Between Silicon Selective Epitaxial Growth Ambients and Degradation of Insulators," J. Vac. Sci Techn. A 14, 3224-3227 (1996).

Lee I-M., G. W. Neudeck and C. G. Takoudis, "Low Pressure Chemical Vapor Deposition of Epitaxial Silicon-Germanium, and Epitaxial Silicon," Electrochem Soc. 96-1, 911-912 (1996).

Panczyk C. and C. G. Takoudis, "In Situ Emission Infrared Spectroscopy During Silicon CVD," Electrochem Soc. 96-1, 921-922 (1996).

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